MIMMG400KR060U 600v 400a igbt module r o h s c ompl i a n t fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient w i th f a s t free-w h e e l i ng diod e s 10k ? gate protected res i st ance insi de applica t ions invertor conv ertor w e lder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d sy mbol pa rame ter t est condit i o n s v a lues unit igbt v c e s coll ector - emitter v o l t age 600 v v ges gate - emitter v o lt age 20 v t c = 25 c 600 a i c dc col l ector c u rrent t c = 80 c 420 a t c = 25c, t p = 1 ms 120 0 a i c pul s pulse d col l ect o r curre nt t c = 80c, t p = 1 ms 840 a p t o t p o w e r diss i p a tion per igb t 208 3 w t j junctio n t e mperature r a n g e -40 to +150 c t s t g s t orage t e mpe rature r a n ge -40 to +125 c v iso l insulati on t e s t v o l t age ac, t= 1min 300 0 v free-wheeling diode v rrm rep e titive rev e rse v o l t a g e 600 v t c = 25 c 500 a i f(a v ) a vera ge fo r w a rd curre nt t c = 80 c 340 a i f(rms) rms fo r w a rd current 488 a t j = 45c , t= 10ms, sine 200 0 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t j = 45c, t= 8.3 ms, sine 220 0 a
MIMMG400KR060U electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 1 ma 3.5 5.5 v i c = 400a, v g e =15v , t j = 25c 1.9 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 400a, v g e =15v , t j = 125 c 2.1 v v c e = 600v , v g e = 0 v , t j = 25c 2 ma i c e s coll ector l e a k age c u rrent v c e = 600v , v g e = 0 v , t j = 125 c 12 ma i ges gate leak age current v c e = 0 v , v g e = 20v 2 ma q g e gate charge v c c = 300 v , i c =400a , v g e = 15v 920 nc c i e s input cap a cit a nce 21.2 n f c oes ou tput cap a c i t ance 2 . 1 n f c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 1 . 4 n f t d ( on) t u rn - on dela y t ime 45 ns t r rise t ime 45 n s t d ( o f f ) t u r n - o f f delay t i m e 320 n s t f fall t i me v c c = 300 v , i c =400a r g =2.5 , v g e = 15v t j = 25c inductive l o ad 35 n s t d ( on) t u rn - on dela y t ime 50 ns t r rise t ime 45 n s t d ( o f f ) t u r n - o f f delay t i m e 350 n s t f fall t i me v c c = 300 v , i c =400a r g =2.5 , v g e = 15v t j = 125c inductive l o ad 40 n s 14 mj e o n t u rn - on s w itc h i n g ener g y 18 mj 10 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 300 v , i c = 400a t j = 25 c r g =2.5 t j = 125c v g e = 15v t j = 25 c inductive l o ad t j = 125c 14 mj free-wheeling diode i f = 400a , v g e = 0 v , t j = 25c 1.9 2.2 v v f f o r w ard v o l t age i f = 400a , v g e = 0 v , t j = 125c 1.7 2.0 v t r r revers e reco ver y t i me 50 ns i rrm max. rev e rse recov e r y curr ent 45 a q r r revers e reco ver y c har ge i f = 400a , v r =400v d i f /d t= -100 0a/ s t j = 125c 1 . 5 c thermal and mechanica l charac t eristics sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.06 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.15 k / w t o rque modu le-to-si n k recomme n d e d m6 3 5 n m t o rque modu le electro des recomme n d e d m6 2.5 5 n m t o rque modu le electro des recomme n d e d m4 0.7 1.1 n m w e ight 325 g
MIMMG400KR060U 120 0 120 0 v ce =20v 100 0 100 0 800 800 i c (a) v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =25c t j =25c i c (a) 600 600 t j =125c 400 400 200 200 0 0 0 1 1 . 5 2.5 3.5 0 v g e v f i gure 2 . t y pic a l t ransfer char acteristics 2 4 6 8 10 12 1 4 2 3 0.5 240 100 v cc = 300v r g =2 .5 ohm v g e = 15v t j =125c 200 v cc = 300v i c =400 a v g e = 15v t j =125c 8 0 e o n e o n e o f f ( mj ) 120 160 e o n e o f f ( mj ) 6 0 e o n 4 0 80 2 0 e o f f 40 e o f f 0 0 200 400 0 17.5 0 2 . 5 7.5 10 12.5 5 15 800 600 100 0 120 0 140 0 r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent 100 0 100 0 t d ( o f f ) t d ( o f f ) t ( n s ) 100 t ( n s ) 100 t r t d ( o n ) t d ( o n ) t f t r 50 6 . 25 7.5 8.75 v cc = 300v i c =400 a v g e =15v t j = 125 c 0 120 360 v cc = 300v r g =2 .5 ohm v g e = 15v t j =125c 840 720 600 480 240 10 t f 1 0 0 1 . 2 5 2.5 3 . 7 5 r g ohm figure6. s w itc h ing t i mes vs. gate resistor i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t
MIMMG400KR060U 100 v cc = 300v i c =400 a t j =25c 5 25 20 q g n c f i gure 7 . ga te char ge char a c teristics 100 0 0 0 400 800 600 200 v g e (v) 15 10 c res c o e s c ies v g e =0v f=1mh z 1 0 c ( n f ) 1 0.1 0 5 1 0 1 5 20 25 30 3 5 v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e 140 0 120 0 0 0 100 200 200 400 600 800 100 0 t j =150c t c =25c v g e =15v i c p u l s ( a ) 480 0 t j =150c t c =25c v g e =15v t s c 10 s 400 0 320 0 240 i csc ( a ) 0 160 0 800 0 700 0 100 300 400 500 600 200 300 400 500 600 700 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 700 200 100 600 500 0 0 t j =150c v g e 15v i c ( a ) 400 300 t c case t e mpera tu re ( c ) f i gure1 1. rate d curre nt vs. t c 25 50 7 5 125 100 150 300 t j = 125 c t j =25c 250 200 150 i f ( a ) 100 5 0 0 175 v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 3 3.5 2.5 2.0 1 . 5 1. 0 0.5 0
MIMMG400KR060U 1 0 - 1 1 0 - 2 1 0 - 3 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 4 dut y 0.5 0.2 0.1 0.05 single p ulse 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 3 1 0 - 2 1 0 - 2 1 0 - 1 1 0 - 1 1 1 dut y 0.5 0.2 0.1 0.05 single p ulse z t hjc ( k/w ) z t hjc ( k/w ) 1 rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diod e rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt dimens i o ns in mm f i gure 15. pack age outli nes
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